leshan radio company, ltd. 1 general purpose transistors s-lbc807-16wt1g sc-70 1. fr?5 = 1.0 x 0.75 x 0.062 in. 2. alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. pnp silicon feature ? collector current capability i c = -500 ma. ? collector-emitter voltage v ceo (max) = -45 v. ? general purpose switching and amplification. ? pnp complement: lbc807 series. ? device marking and ordering information maximum ratings rating symbol v alue unit collector?emitter voltage v ceo ?45 v collector?base voltage v cbo ?50 v emitter?base voltage v ebo ?5.0 v collector current ? continuous i c ?500 madc thermal characteristics 2 emitter 3 collector 1 base we declare that the material of product compliance with rohs requirements. device marking shipping lbc807-16wt1g 5a 3000/tape&reel lbc807-16wt3g 5a 10000/tape&reel characteristic symbol max unit total device dissipation fr- 5 board (1) p d 150 mw t a =25 c derate above 25c 1.2 mw/c thermal resistance, junction to ambient r ja 833 c/w total device dissipation p d 200 mw alumina substrate, (2) t a = 25c derate above 25c 1.6 mw/c thermal resistance, junction to ambient r ja 625 c/w junction and storage temperature t j , t stg ?55 to +150 c 2 3 rev.o 1/3 lbc807-16wt1g ? s- prefix for automotive and other applications requiring unique site and control change requirements; aec-q101 qualified and ppap capable. s-lbc807-16wt1g s-lbc807-16wt3g
leshan radio company, ltd. electrical characteristics (t a = 25c unless otherwise noted.) characteristic symbol min typ max unit off characteristics collector?emitter breakdown voltage (i c = ?10 ma) v (br)ceo ?45 ? ? v collector?emitter breakdown voltage (v eb = 0, i c = ?10 a) v (br)ces ?50 ? ? v emitter?base breakdown voltage (i e = ?1.0 a) v (br)ebo ?5.0 ? ? v collector cutoff current i cbo (v cb = ?20 v) ? ? ?100 na (v cb = ?20 v, t j = 150c) ? ? ?5.0 a electrical characteristics (t a = 25c unless otherwise noted) characteristic symbol min typ max unit on characteristics fe ? (i c = ?100 ma, v ce collector?emitter saturation voltage v ce(sat) ? ? ?0.7 v (i c = ?500 ma, i b = ?50 ma) base?emitter on voltage v be(on) ? ? ?1.2 v (i c = ?500 ma, v ce = ?1.0 v) small?signal characteristics current?gain ? bandwidth product f t 100 ? ? mhz (i c = ?10 ma, v ce = ?5.0 v dc , f = 100 mhz) output capacitance c obo ?10 ?pf (v cb = ?10 v, f = 1.0 mhz) = ?1.0 v) 100 ? 250 dc current gain h lbc807-16wt1g rev.o 2/3 s-lbc807-16wt1g
leshan radio company, ltd. sc?70 (sot?323) a a2 d e1 b e e a1 c l 3 12 notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 0.05 (0.002) 1.9 0.075 0.65 0.025 0.65 0.025 0.9 0.035 0.7 0.028 mm inches scale 10:1 xx m xx = specific device code m = date code = pb?free package generic marking diagram *this information is generic. please refer to device data sheet for actual part marking. pb?free indicator, ago or microdot a o, may or may not be present. 1 soldering footprint* h e dim a min nom max min millimeters 0.80 0.90 1.00 0.032 inches a1 0.00 0.05 0.10 0.000 a2 0.7 ref b 0.30 0.35 0.40 0.012 c 0.10 0.18 0.25 0.004 d 1.80 2.10 2.20 0.071 e 1.15 1.24 1.35 0.045 e 1.20 1.30 1.40 0.047 0.035 0.040 0.002 0.004 0.014 0.016 0.007 0.010 0.083 0.087 0.049 0.053 0.051 0.055 nom max l 2.00 2.10 2.40 0.079 0.083 0.095 h e e1 0.65 bsc 0.425 ref 0.028 ref 0.026 bsc 0.017 ref lbc807-16wt1g rev.o 3/3 s-lbc807-16wt1g
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